A 32-bit Multiply-Accumulate Circuit in Complementary GaAs (CGaAsTM)
- Matthew A. Postiff, Timothy D. Strong
The addition of a low temperature GaAs (LTG) layer to the self-aligned complementary GaAs (CGaAs/sup TM/) HIGFET structure has reduced the SEU sensitivity while improving the short channel characteristics of the P-channel HIGFETs. Subthreshold leakage currents, gate leakage, and output conductances have been significantly reduced. Designs of 170 K transistor complexity have been demonstrated on CGaAs/sup TM/ wafers with the LTG layer.