Radiation hardened complementary GaAs(CGaAs/sup TM/)


The addition of a low temperature GaAs (LTG) layer to the self-aligned complementary GaAs (CGaAs/sup TM/) HIGFET structure has reduced the SEU sensitivity while improving the short channel characteristics of the P-channel HIGFETs. Subthreshold leakage currents, gate leakage, and output conductances have been significantly reduced. Designs of 170 K… (More)


6 Figures and Tables