Radiation effects on IGBT under γ irradiation


A lot of analysis on IGBT (insulated gate bipolar transistor) irradiation has been carried out by researchers. IGBT in power system has been dominating MOS (metal oxide semiconductor) transistor since IGBTs guarantee better conduction and less expensive. The radiation induced characteristics of IGBT are mainly emphasized the threshold shifting due to the oxide charge trapping in MOS and the reduction of current gain in the bi-polar transistor being inherently composed in the IGBT structure. In this paper, the IGBT macro-model incorporating irradiation is implemented and analyzed the electrical characteristics by SPICE simulation tool. It is expected that the experimental data is evaluated and compared with the simulation model.

Cite this paper

@article{Lho2007RadiationEO, title={Radiation effects on IGBT under γ irradiation}, author={Young Hwan Lho and Sang Yong Lee and Phil-Hyun Kang}, journal={2007 International Conference on Control, Automation and Systems}, year={2007}, pages={893-896} }