Radiation effects in SiGe p-MODFETs grown on Silicon-on-Sapphire substrates

Abstract

The radiation response of strained SiGe p-MODFETs to 63 MeV protons is investigated for the first time. It is observed that both the drain current and the transconductance of the devices improve (increase) marginally following proton exposure. Low-frequency noise measurements were made both before and after irradiation to better understand the role of traps… (More)

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Cite this paper

@article{Madan2009RadiationEI, title={Radiation effects in SiGe p-MODFETs grown on Silicon-on-Sapphire substrates}, author={Anuj Madan and Jiong Jiong Mo and Rajan Arora and Stanley D. Phillips and John D. Cressler and Paul W. Marshall and Ronald D. Schrimpf and Steven J. Koester}, journal={2009 European Conference on Radiation and Its Effects on Components and Systems}, year={2009}, pages={24-28} }