Radiation Induced Change in Defect Density in ${\hbox {HfO}}_{2}$-Based MIM Capacitors

The effect of radiation-introduced defects on the behaviour of HfO2-based metal-insulator-metal (MIM) capacitors as a function of gamma-ray radiation dose from 10 to 1000 krad are reported. Half the capacitors studied showed no degradation after exposure to 1000 krad from a 60Co source, whilst the remaining half showed no change to parameters, such as… CONTINUE READING