Radiation Effects on CMOS Image Sensors With Sub-2 $\mu{\rm m}$ Pinned Photodiodes

@article{Place2012RadiationEO,
  title={Radiation Effects on CMOS Image Sensors With Sub-2 \$\mu\{\rm m\}\$ Pinned Photodiodes},
  author={Smith Place and J.-P. Carrere and Stephane Allegret and Pierre Magnan and Vincent Goiffon and F. Roy},
  journal={IEEE Transactions on Nuclear Science},
  year={2012},
  volume={59},
  pages={909-917}
}
CMOS image sensor hardness under irradiation is a key parameter for application fields such as space or medical. In this paper, four commercial sensors featuring different technological characteristics (pitch, isolation or buried oxide) have been irradiated with <formula formulatype="inline"> <tex Notation="TeX">$^{60}{\rm Co}$</tex></formula> source. Based… CONTINUE READING