Radiation Characterization of 512Mb SDRAMs

  title={Radiation Characterization of 512Mb SDRAMs},
  author={R. K. Lawrence},
  journal={2007 IEEE Radiation Effects Data Workshop},
  • R. K. Lawrence
  • Published 2007 in 2007 IEEE Radiation Effects Data Workshop
Two single data-rate 512 Mb SDRAMs have been radiation characterized. The SDRAMs were not from the same manufacturer. The results of total ionizing dose, single event latchup and single event upset are presented. Radiation results show similarities in total ionizing dose level, but demonstrate different modes of failure. One SDRAM experienced single event latchup; whereas the other did not, and for this SDRAM, single event upset with heavy ion and proton testing yielded useable results. 
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