RF reliability of MOSFETs subject to electrical stress

Abstract

The impact of gate and drain voltage stress on the analog performance of MOSFETs at RF frequencies was studied systematically. 0.16-/spl mu/m NMOSFETs have been evaluated experimental to examine the RF performance metrics such as cutoff frequency, linearity, noise figure, and 1/f noise. A methodology is presented to study the reliability in MOSFETs subject to stress. Both circuit simulation and measurement data are employed to prove the finding and methodology.

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Cite this paper

@article{Yu2004RFRO, title={RF reliability of MOSFETs subject to electrical stress}, author={Chuanzhao Yu and J. S. Yuan}, journal={Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.}, year={2004}, volume={2}, pages={816-819 vol.2} }