RF performance projections for 2D graphene transistors: Role of parasitics at the ballistic transport limit


The modeled device structures are shown in Figure 1, (a) top-gated structure &#x03B5;<inf>ox</inf> = 20 and t<inf>ox</inf> = 1.5nm, and (b) back-gated structure with 90nm thick SiO<inf>2</inf>. The contact resistance and parasitic capacitance have also been taken into consideration in the simulations. Figure 2 shows the effect of M-G contacts on the… (More)


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