RF and Microwave Oscillator Design using p-HEMT Transistor

@inproceedings{Benakaprasad2014RFAM,
  title={RF and Microwave Oscillator Design using p-HEMT Transistor},
  author={Bhavana Benakaprasad and Salah Sharabi and Dr. Khaled Elgaid},
  year={2014}
}
This paper presents a systematic approach to designing negative-resistance and Colpitts oscillators using p-HEMT transistor. Various models such as, common source and common gate configuration in negative-resistance oscillators, common source series feedback in Colpitts oscillator is selected to analyze the output power and stability presented by the p-HEMT transistor. These oscillators are designed at 2.45 GHz frequency for which we find application in Bluetooth and Wi-Fi. In this paper, these… CONTINUE READING
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