Corpus ID: 28192754

RF Modeling for FDSOI MOSFET and Self Heating Effect on RF Parameter Extraction

@inproceedings{SKH2005RFMF,
  title={RF Modeling for FDSOI MOSFET and Self Heating Effect on RF Parameter Extraction},
  author={Fung S.K.H. and P. Su and H. Wan},
  year={2005}
}
In this paper, a BSIMSOI RF gate resistance model for FDSOI MOSFET is introduced and verified. With the addition of the gate resistance model, the RF characteristic of FDSOI MOSFET could be modeled well. Self-heating effect (SHE) will affect RF data fitting significantly. A simple method to extract thermal resistance is proposed. 
3 Citations

Figures from this paper

BSIM—making the first international standard MOSFET model
  • C. Hu
  • Computer Science
  • Science in China Series F: Information Sciences
  • 2008
High temperature submicron SOI CMOS technology characterization for analog and digital applications up to 300°C

References

SHOWING 1-6 OF 6 REFERENCES
A unified model for partial-depletion and full-depletion SOI circuit designs: using BSIMPD as a foundation
CMOS scaling into the nanometer regime
SOI technology for the GHz era
  • G. Shahidi
  • Engineering, Computer Science
  • IBM J. Res. Dev.
  • 2002