RF Characterization of SiGe HBT Power Amplifiers Under Load Mismatch

  • A. Keerti, A. Pham
  • Published 2007 in
    IEEE Transactions on Microwave Theory and…
We present the RF characterization of silicon-germanium heterojunction bipolar transistor (SiGe HBT) power amplifiers (PA) under load mismatched conditions. Experimental results demonstrate a strong dependence of a PA's RF performance on the phase of mismatched antenna loads. For a load mismatch of voltage standing-wave ratio (VSWR) of 10:1, the 1-dB… (More)