RECOMBINATION AT SEMICONDUCTOR SURFACES AND INTERFACES

@article{Aspnes1983RECOMBINATIONAS,
  title={RECOMBINATION AT SEMICONDUCTOR SURFACES AND INTERFACES},
  author={D. E. Aspnes},
  journal={Surface Science},
  year={1983},
  volume={132},
  pages={406-421}
}
  • D. E. Aspnes
  • Published 1983
  • Materials Science
  • Surface Science
  • Abstract The present state of understanding of recent work on recombination processes at semiconductor surfaces and interfaces is assessed. The derivation of the phenomenological Stevenson-Keyes expression is outlined to indicate basic mechanisms and assumptions and to provide the theoretical framework for interpreting recombination data. Trends in recombination velocities with bulk doping are shown to be an important diagnostic tool in the absence of explicit information about the surface… CONTINUE READING
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