RDIS: A recursively defined invertible set scheme to tolerate multiple stuck-at faults in resistive memory

@article{Melhem2012RDISAR,
  title={RDIS: A recursively defined invertible set scheme to tolerate multiple stuck-at faults in resistive memory},
  author={Rami G. Melhem and Rakan Maddah and Sangyeun Cho},
  journal={IEEE/IFIP International Conference on Dependable Systems and Networks (DSN 2012)},
  year={2012},
  pages={1-12}
}
With their potential for high scalability and density, resistive memories are foreseen as a promising technology that overcomes the physical limitations confronted by charge-based DRAM and flash memory. Yet, a main burden towards the successful adoption and commercialization of resistive memories is their low cell reliability caused by process variation and limited write endurance. Typically, faulty and worn-out cells are permanently stuck at either `0' or `1'. To overcome the challenge, a… CONTINUE READING
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