Quasiparticle trapping in distributed three-terminal double tunnel devices (particle detectors)

Abstract

Devices of the structure S/sub 1/IS/sub 2/S/sub 1/S/sub 2/IS/sub 1/ have been fabricated in which the common S/sub 1/ layer is an epitaxially grown Nb base electrode and S/sub 2/ is Ta. By strongly biasing one junction a nonequilibrium distribution of quasi-particles is established in the Nb base. These quasi-particles may be detected by the other junction… (More)

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