Quasiballistic electron transport in cryogenic SiGe HBTs studied using an exact, semi-analytic solution to the Boltzmann equation

@article{Naik2021QuasiballisticET,
  title={Quasiballistic electron transport in cryogenic SiGe HBTs studied using an exact, semi-analytic solution to the Boltzmann equation},
  author={Nachiket R. Naik and Austin J. Minnich},
  journal={Journal of Applied Physics},
  year={2021}
}
Silicon-germanium heterojunction bipolar transistors (HBTs) are of interest as low-noise microwave amplifiers due to their competitive noise performance and low cost relative to III-V devices. The fundamental noise performance limits of HBTs are thus of interest, and several studies report that quasiballistic electron transport across the base is a mechanism leading to cryogenic non-ideal IV characteristics that affects these limits. However, this conclusion has not been rigorously tested… 

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