Quasiballistic electron transport in cryogenic SiGe HBTs studied using an exact, semi-analytic solution to the Boltzmann equation

  title={Quasiballistic electron transport in cryogenic SiGe HBTs studied using an exact, semi-analytic solution to the Boltzmann equation},
  author={Nachiket R. Naik and Austin J. Minnich},
  journal={Journal of Applied Physics},
Silicon-germanium heterojunction bipolar transistors (HBTs) are of interest as low-noise microwave amplifiers due to their competitive noise performance and low cost relative to III-V devices. The fundamental noise performance limits of HBTs are thus of interest, and several studies report that quasiballistic electron transport across the base is a mechanism leading to cryogenic non-ideal IV characteristics that affects these limits. However, this conclusion has not been rigorously tested… 

Figures from this paper


A microscopic study of transport in thin base silicon bipolar transistors
A comprehensive study of electron transport within silicon bipolar transistors with varying base widths is conducted using a rigorous microscopic model, the scattering matrix approach. Results are
Collector Transport in SiGe HBTs Operating at Cryogenic Temperatures
This paper provides insight into the transport mechanisms of the collector current in SiGe HBTs operating at cryogenic temperatures and compares three technology generations of devices. Based on the
Silicon-Germanium Heterojunction Bipolar Transistors for Extremely Low-Noise Applications
Historically speaking, the world of extremely low-noise solid-state amplification has been dominated by exotic technologies such as InP and GaAs HEMTs. By cryogenically cooling these devices, it is
Inhomogeneous electrical characteristics in 4H-SiC Schottky diodes
Hundreds of current–voltage (I–V) measurements of Ni, Pt and Ti Schottky diodes on 4H–SiC were conducted at low applied voltages. The SiC substrates contained homoepitaxial layers grown by either
Physical and Electrical Performance Limits of High-Speed SiGeC HBTs—Part I: Vertical Scaling
The overall purpose of this paper (including Part I, in this issue) is the prediction of the ultimate electrical high-frequency performance potential for SiGeC heterojunction bipolar transistors
Diffusion in a short base
The Origin of Ideality Factors n > 2 of Shunts and Surfaces in the Dark I-V Curves of Si 625 Solar Cells
So far, a general model for the explanation of non-linear shunts and edge currents, often showing ideality factors n > 2, has been missing. Non-linear shunts like scratches and edge currents are the
Transconductance Degradation in Near-THz InP Double-Heterojunction Bipolar Transistors
We examine the relationship between transconductance gm and emitter current density JE for InP/InGaAs/InP abrupt emitter-base (EB) double-heterojunction bipolar transistors operating at high JE. High