Quasi-free-standing epitaxial graphene on SiC obtained by hydrogen intercalation.

@article{Riedl2009QuasifreestandingEG,
  title={Quasi-free-standing epitaxial graphene on SiC obtained by hydrogen intercalation.},
  author={Christian Riedl and Camilla Coletti and Takayuki Iwasaki and Alexei A. Zakharov and Ulrich Starke},
  journal={Physical review letters},
  year={2009},
  volume={103 24},
  pages={
          246804
        }
}
Quasi-free-standing epitaxial graphene is obtained on SiC(0001) by hydrogen intercalation. The hydrogen moves between the (6 square root(3) x 6 square root(3))R30 degrees reconstructed initial carbon layer and the SiC substrate. The topmost Si atoms which for epitaxial graphene are covalently bound to this buffer layer, are now saturated by hydrogen bonds. The buffer layer is turned into a quasi-free-standing graphene monolayer with its typical linear pi bands. Similarly, epitaxial monolayer… Expand
Structural investigations of hydrogenated epitaxial graphene grown on 4H-SiC (0001)
Structural investigations of hydrogenated epitaxial graphene grown on SiC(0001) are presented. It is shown that hydrogen plays a dual role. In addition to contributing to the well-known removal ofExpand
Quasi-free-standing epitaxial graphene on SiC (0001) by fluorine intercalation from a molecular source.
TLDR
Novel structures due to a highly localized perturbation caused by the presence of adsorbed fluorine were produced in the intercalation process and investigated and photoemission spectroscopy is used to confirm these electronic and structural changes. Expand
Formation of high-quality quasi-free-standing bilayer graphene on SiC(0 0 0 1) by oxygen intercalation upon annealing in air
We report on the conversion of epitaxial monolayer graphene on SiC(0 0 0 1) into decoupled bilayer graphene by performing an annealing step in air. We prove by Raman scattering and photoemissionExpand
Large area quasi-free standing monolayer graphene on 3C-SiC(111)
Large scale, homogeneous quasi-free standing monolayer graphene is obtained on cubic silicon carbide, i.e., the 3C-SiC(111) surface, which represents an appealing and cost effective platform forExpand
Large Area Quasi-Free Standing Monolayer Graphene on 3C-SiC(111)
Large scale, homogeneous quasi-free standing monolayer graphene is obtained on a (111) oriented cubic SiC bulk crystal. The free standing monolayer was prepared on the 3C-SiC(111) surface by hydrogenExpand
A Table-Top Formation of Bilayer Quasi-Free-Standing Epitaxial-Graphene on SiC(0001) by Microwave Annealing in Air
We propose a table-top method to obtain bilayer quasi-free-standing epitaxial-graphene (QFSEG) on SiC(0001). By applying a microwave annealing in air to a monolayer epitaxial graphene (EG) grown onExpand
Approaching truly freestanding graphene: the structure of hydrogen-intercalated graphene on 6H-SiC(0001).
TLDR
A structural comparison to other graphenes suggests that hydrogen-intercalated graphene on 6H-SiC(0001) approaches ideal graphene, and a density functional calculation finds a purely physisorptive adsorption height. Expand
Epitaxial graphene on SiC: from carrier density engineering to quasi-free standing graphene by atomic intercalation
Epitaxial graphene (EG) on SiC has been proven to be an excellent material to investigate the fundamental physical properties of graphene and also to directly implement new findings into devicesExpand
The quasi-free-standing nature of graphene on H-saturated SiC(0001)
We report on an investigation of quasi-free-standing graphene on 6H-SiC(0001) which was prepared by intercalation of hydrogen under the buffer layer. Using infrared absorption spectroscopy, we proveExpand
Charge-neutral epitaxial graphene on 6H–SiC(0001) via FeSi intercalation
Abstract Graphene grown epitaxially on SiC(0001) substrates always exhibits n-type doping due to the coupling interaction between the substrate and graphene. The electronic properties of epitaxialExpand
...
1
2
3
4
5
...

References

SHOWING 1-9 OF 9 REFERENCES
APPL
Statistical packages have been used for decades to analyze large datasets or to perform mathematically intractable statistical methods. These packages are not capable of working with random variablesExpand
CM 21
  • 134016
  • 2009
Condens
  • Matter 21, 134016
  • 2009
Science 324
  • 1530
  • 2009
Electrochem
  • Solid-State Lett. 11, H285
  • 2008
Phys
  • Rev. Lett. 99, 076802
  • 2007
CM 16
  • S1755
  • 2004
Condens
  • Matter 16, S1755
  • 2004
Phys
  • 85, 3569
  • 1999