Quasi-free-standing epitaxial graphene on SiC obtained by hydrogen intercalation.

@article{Riedl2009QuasifreestandingEG,
  title={Quasi-free-standing epitaxial graphene on SiC obtained by hydrogen intercalation.},
  author={Christian Riedl and Camilla Coletti and Takayuki Iwasaki and Alexei A. Zakharov and Ulrich Starke},
  journal={Physical review letters},
  year={2009},
  volume={103 24},
  pages={
          246804
        }
}
Quasi-free-standing epitaxial graphene is obtained on SiC(0001) by hydrogen intercalation. The hydrogen moves between the (6 square root(3) x 6 square root(3))R30 degrees reconstructed initial carbon layer and the SiC substrate. The topmost Si atoms which for epitaxial graphene are covalently bound to this buffer layer, are now saturated by hydrogen bonds. The buffer layer is turned into a quasi-free-standing graphene monolayer with its typical linear pi bands. Similarly, epitaxial monolayer… 

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