Quantum well and laser containing InAs quantum dots

Multiple quantum wells (MQW) and laser-containing InAs quantum dots were grown on GaAs using molecularbeam epitaxy. For the MQW, the wells consisted of monolayers of InAs covered by In0.15Ga0.85As, with the barrier layers being GaAs. The photoluminescence measurements were correlated with the strain in the wells. A continuing strain was observed for the… (More)