Quantum two-dimensional calculation of time constants of random telegraph signals in metal-oxide-semiconductor structures

@article{Palma1997QuantumTC,
  title={Quantum two-dimensional calculation of time constants of random telegraph signals in metal-oxide-semiconductor structures},
  author={Alberto J. Palma and Andr{\'e}s Godoy and Juan A Jim{\'e}nez-Tejada and J. E. Carceller and Juan Antonio L{\'o}pez-Villanueva},
  journal={Physical Review B},
  year={1997},
  volume={56},
  pages={9565-9574}
}
The thermal and gate-voltage dependencies for the capture and emission times of random telegraph signals have been theoretically analyzed in a Si-SiO2 interface. A quasi-two-dimensional treatment of the interaction between a neutral near-interface oxide trap and an electron in the subband of the inversion layer has been developed to obtain expressions for the capture and emission times where the influence of the trap parameters ~energy depth, distance to the interface, and electron-phonon… 
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