• DOI:10.1109/EDST.2009.5166116
Corpus ID: 10377971

Quantum transport in silicon double-gate MOSFET

@article{Lamba2009QuantumTI,
  title={Quantum transport in silicon double-gate MOSFET},
  author={V. Lamba and D. Engles and S. Malik and M. Verma},
  journal={2009 2nd International Workshop on Electron Devices and Semiconductor Technology},
  year={2009},
  pages={1-4}
}

V. Lamba, D. Engles, +1 author M. Verma

Published 2009

Physics

2009 2nd International Workshop on Electron Devices and Semiconductor Technology

The full complex band structure model in ultra-scaled (∼10nm) DG MOSFETs is studied. Building on a previous 2D/1D model, we have included a more realistic band structure to describe the quantum transport. The empirical tight-binding Hamiltonian, rather than that based on effective mass theory, is used directly in the NEGF formalism. The nearest and second nearest neighbor coupling are taken into account to obtain an accurate Si band structure model. Use of the complex band structure causes the… CONTINUE READING

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