Quantum-size effects in sub 10-nm fin width InGaAs FinFETs

@article{Vardi2015QuantumsizeEI,
  title={Quantum-size effects in sub 10-nm fin width InGaAs FinFETs},
  author={A. Vardi and Xuefei Zhao and Jes{\'u}s A. del Alamo},
  journal={2015 IEEE International Electron Devices Meeting (IEDM)},
  year={2015},
  pages={31.3.1-31.3.4}
}
InGaAs FinFETs with sub-10 nm fin widths were fabricated for the first time using precision dry etching and digital etch. We find that the threshold voltage, Vt, becomes highly sensitive to the fin width, Wf, in the sub-10 nm Wf range. 2D Poisson-Schrodinger simulations suggest that this is due to quantization effects. We also show that in the quantum regime, a sidewall slope below 850 significantly reduce Vt variation at the same drawn dimensions. 
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