Quantum mechanical device modeling: FinFET having an isolated n+/p+ gate region strapped with poly-silicon.

Abstract

In this paper, we present our numerical study on FinFET having an isolated n+/p+ gate region strapped with metal and poly-silicon structure. Our theoretical work is based on 2-D quantum-mechanical simulator with a self-consistent solution of Poisson-Schrödinger equation. Our numerical simulation revealed that the threshold voltage (VT) is controlled within… (More)

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