Quantum electrical transport properties of topological insulator Bi2Te3 nanowires

@article{Kim2016QuantumET,
  title={Quantum electrical transport properties of topological insulator Bi2Te3 nanowires},
  author={Hong-Seok Kim and Ho Sun Shin and Joon‐Sung Lee and Chi Won Ahn and Jae Yong Song and Yong-Joo Doh},
  journal={Current Applied Physics},
  year={2016},
  volume={16},
  pages={51-56}
}
Abstract We investigate the quantum transport properties of surface electrons on a topological insulator Bi2Te3 nanowire in a magnetotransport study. Although the nanowires are synthesized by using a relatively coarse method of electrochemical deposition, clear Aharonov–Bohm oscillations of phases 0 and π are observed, owing to the highly coherent surface electron channel. The oscillation amplitude exhibits exponential temperature dependence, suggesting that the phase coherence length Lφ is… Expand
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References

SHOWING 1-10 OF 39 REFERENCES
Aharonov-Bohm oscillations in disordered topological insulator nanowires.
TLDR
It is shown how h/e and h/2e flux oscillations of the conductance depend on doping and disorder strength, and a possible explanation for the experiments is provided, and further experiments that could verify the theory are discussed. Expand
Quasiballistic transport of Dirac fermions in a Bi2Se3 nanowire.
TLDR
From their exponential temperature dependence, it is inferred that an unusual 1/T power law for the phase coherence length L(φ)(T) is typical for quasiballistic fermions weakly coupled to their environment. Expand
Surface state transport and ambipolar electric field effect in Bi₂Se₃ nanodevices.
TLDR
Electronic transport measurements on thin Bi2Se3 devices are reported and it is shown that the density of the surface states can be modulated via the electric field effect by using a top-gate with a high-k dielectric insulator. Expand
Manipulating surface states in topological insulator nanoribbons.
TLDR
Experimental evidence for the modulation of surface states by using a gate voltage to control quantum oscillations in Bi(2)Te(3) nanoribbons and the first observation of h/2e periodic oscillations are reported, suggesting the presence of time-reversed paths with the same relative zero phase at the interference point. Expand
Aharonov-Bohm interference in topological insulator nanoribbons.
TLDR
Pronounced Aharonov-Bohm oscillations in the magnetoresistance clearly demonstrate the coherent propagation of two-dimensional electrons around the perimeter of the nanoribbon surface, as expected from the topological nature of the surface states. Expand
Anomalous Aharonov-Bohm conductance oscillations from topological insulator surface states.
TLDR
The conductance maxima are achieved at odd multiples of 1/2Φ(0), implying that a π AB phase for electrons strengthens the metallic nature of surface states, and a key ingredient, the surface curvature induced Berry phase, is emphasized here. Expand
Bulk band gap and surface state conduction observed in voltage-tuned crystals of the topological insulator Bi2Se3.
TLDR
A transport study of exfoliated few monolayer crystals of topological insulator Bi2Se3 in an electric field effect geometry finds that the temperature T and magnetic field dependent transport properties in the vicinity of this V(g) can be explained by a bulk channel with activation gap of approximately 50 meV and a relatively high-mobility metallic channel that dominates at low T. Expand
Quantum Oscillations and Hall Anomaly of Surface States in the Topological Insulator Bi2Te3
TLDR
The observation of Shubnikov–de Haas oscillations arising from the surface states in nonmetallic crystals of Bi2Te3 are reported and a Hall anomaly in weak fields is uncovered, which enables the surface current to be seen directly and yield a surface mobility substantially higher than in the bulk. Expand
One-dimensional weak antilocalization in single-crystal Bi2Te3 nanowires
TLDR
The magnetoconductance of Bi2Te3 single-crystal nanowires in low field regime can be well described by one-dimensional (1D) weak antilocalization (WAL) model, where the dephasing length of the electrons follows T−1/3 dependence but insensitive to the wire diameter. Expand
Dual evidence of surface Dirac states in thin cylindrical topological insulator Bi2Te3 nanowires
TLDR
A systematic comparative study on the cylindrical single-crystal Bi2Te3 nanowires of various diameters is carried out, and unambiguously dual evidence for the Dirac SS is reported. Expand
...
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3
4
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