Quantum efficiency of X-ray CCDs

Abstract

We have performed precise measurements of X-ray absorption constants for all the thin films comprising CCD gate structure, namely, phosphourous doped polysilicon, silicon dioxide, and silicon nitride. X-ray absorption of these films shows large oscillations around the corresponding absorption edges: nitrogen K (400 eV), oxygen K (536 eV), silicon L and K… (More)

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@inproceedings{Prigozhina2003QuantumEO, title={Quantum efficiency of X-ray CCDs}, author={G. Prigozhina and J Woob and J. A. Gregoryc and A. H. Loomisc and M. W. Bautza and G. R. Ricker and Sally A. Kraft}, year={2003} }