Quantum efficiency and temperature coefficients of GaInP/GaAs dual-junction solar cell

@article{Liu2009QuantumEA,
  title={Quantum efficiency and temperature coefficients of GaInP/GaAs dual-junction solar cell},
  author={Lei Liu and Nuofu Chen and Yiming Bai and Mingzhong Cui and Han Zhang and Fubao Gao and Zhigang Yin and Xingwang Zhang},
  journal={Science in China Series E: Technological Sciences},
  year={2009},
  volume={52},
  pages={1176-1180}
}
GaInP/GaAs dual-junction solar cell with a conversion efficiency of 25.2% has been fabricated using metalorganic chemical vapor deposition (MOCVD) technique. Quantum efficiencies of the solar cell were measured within a temperature range from 25 to 160°C. The results indicate that the quantum efficiencies of the subcells increase slightly with the increasing temperature. And red-shift phenomena of absorption limit for all subcells are observed by increasing the cell’s work temperature, which… 

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