Quantum efficiency and temperature coefficients of GaInP/GaAs dual-junction solar cell

  title={Quantum efficiency and temperature coefficients of GaInP/GaAs dual-junction solar cell},
  author={L. Liu and N. Chen and Yiming Bai and M. Cui and H. Zhang and F. Gao and Z. Yin and X. Zhang},
  journal={Science in China Series E: Technological Sciences},
  • L. Liu, N. Chen, +5 authors X. Zhang
  • Published 2009
  • Materials Science
  • Science in China Series E: Technological Sciences
  • GaInP/GaAs dual-junction solar cell with a conversion efficiency of 25.2% has been fabricated using metalorganic chemical vapor deposition (MOCVD) technique. Quantum efficiencies of the solar cell were measured within a temperature range from 25 to 160°C. The results indicate that the quantum efficiencies of the subcells increase slightly with the increasing temperature. And red-shift phenomena of absorption limit for all subcells are observed by increasing the cell’s work temperature, which… CONTINUE READING
    16 Citations

    Figures and Tables from this paper.

    Temperature Dependence of InGaN Dual-Junction Solar Cell
    • 7
    Temperature-dependent measurements of an inverted metamorphic multijunction (IMM) solar cell
    • 37
    • PDF
    Cell thickness optimization of dual junction InGaP/GaAs solar cell against temperature variation
    Ag2S quantum dot-sensitized WO3 photoelectrodes for solar cells
    • 30
    A method for estimating temperature dependent short circuit current
    • 2