Quantum dot lasers based on a stacked and strain-compensated active region grown by metal-organic chemical vapor deposition

@inproceedings{Nuntawong2005QuantumDL,
  title={Quantum dot lasers based on a stacked and strain-compensated active region grown by metal-organic chemical vapor deposition},
  author={Noppadon Nuntawong and Y.-C. Xin and S. Birudavolu and P. S. Wong and Shunjuan Huang and Chris P. Hains and Diana L. Huffaker},
  year={2005}
}
We demonstrate an InAs/GaAs quantum dot sQDd laser based on a strain-compensated, three-stack active region. Each layer of the stacked QD active region contains a thin GaP sDao=−3.8%d tensile layer embedded in a GaAs matrix to partially compensate the compressive strain of the InAs sDao=7%d QD layer. The optimized GaP thickness is ,4 MLs and results in a 36% reduction of compressive strain in our device structure. Atomic force microscope images, room-temperature photoluminescence, and x-ray… CONTINUE READING

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