Quantum confinement and electroluminescence in ultrathin silicon nanowires fabricated by a maskless etching technique.

@article{Irrera2012QuantumCA,
  title={Quantum confinement and electroluminescence in ultrathin silicon nanowires fabricated by a maskless etching technique.},
  author={Alessia Irrera and Pietro Artoni and Fabio Iacona and Emanuele Francesco Pecora and Giorgia Franz{\`o} and Matteo Galli and Barbara Fazio and Simona Boninelli and Francesco Priolo},
  journal={Nanotechnology},
  year={2012},
  volume={23 7},
  pages={075204}
}
We present a novel approach for the direct synthesis of ultrathin Si nanowires (NWs) exhibiting room temperature light emission. The synthesis is based on a wet etching process assisted by a metal thin film. The thickness-dependent morphology of the metal layer produces uncovered nanometer-size regions which act as precursor sites for NW formation. The process is cheap, fast, maskless and compatible with Si technology. Very dense arrays of long (several micrometers) and small (diameter of 5-9… CONTINUE READING

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