Quantum coherence of electrons in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy

@article{Bhasker2014QuantumCO,
  title={Quantum coherence of electrons in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy},
  author={H.P. Bhasker and Varun Thakur and S. M. Shivaprasad and Subhabrata Dhar},
  journal={arXiv: Mesoscale and Nanoscale Physics},
  year={2014}
}
The depth distribution of the transport properties as well as the temperature dependence of the low field magneto-conductance for several c-axis oriented GaN nanowall network samples grown with different average wall-widths are investigated. Magneto-conductance recorded at low temperatures shows clear signature of weak localization effect in all nanowall samples studied here. The scattering mean free path and the phase coherence time, are extracted from the magneto-conductance profile. Electron… 
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References

SHOWING 1-10 OF 21 REFERENCES
High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy
Transport and optical properties of random networks of c-axis oriented wedge-shaped GaN nanowalls grown spontaneously on c-plane sapphire substrates through molecular beam epitaxy are investigated.
Transport and optical properties of c-axis oriented wedge shaped GaN nanowall network grown by molecular beam epitaxy
The transport and optical properties of wedge-shaped nanowall network of GaN grown spontaneously on cplane sapphire substrate by Plasma-Assisted Molecular Beam Epitaxy (PAMBE) show interesting
Enhanced spin-orbit scattering length in narrow AlxGa1-xN/GaN wires
The magnetotransport in a set of identical parallel AlGaN/GaN quantum wire structures was investigated. The width of the wires was ranging between 1110 nm and 340 nm. For all sets of wires clear
Universal conductance fluctuations in the magnetoresistance of submicron-size n+-GaAs wires and laterally confined n−-GaAs/(AlGa)As heterostructures
Abstract Universal conductance fluctuations (UCF) in the magnetoresistance of electron beam lithographed n+-GaAs wires of length 10 μm and widths down to 90 nm are examined over the temperature range
Phase coherence length of electron waves in narrow AlGaAs/GaAs quantum wires fabricated by focused ion beam implantation
The phase coherence length Lφ of electron waves in the one‐dimensional weak localization regime was studied in selectively doped AlGaAs/GaAs quantum wires fabricated by focused ion beam implantation.
Low field electron mobility in GaN
Temperature and doping dependencies of electron mobility in GaN have been calculated using an iterative technique. The following scattering mechanisms, i.e., impurity, polar optical phonon, acoustic
Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy
  • A. Zhong, K. Hane
  • Materials Science, Medicine
    Nanoscale Research Letters
  • 2012
TLDR
The conductive porous GaN nanowall network can be useful for integrated gas sensors due to the large surface area-to-volume ratio and electrical conductivity along the lateral direction by combining with Si micromachining.
Weak Localization and its Applications as AN Experimental Tool
The resistance of two-dimensional electron systems such as thin disordered films shows deviations from Boltzmann theory, which are caused by quantum corrections and are called weak localization. The
Evidence for Dislocation Induced Spontaneous Formation of GaN Nanowalls and Nanocolumns on Bare C-Plane Sapphire
We demonstrate spontaneous growth of a high density of self-organized, oriented, and epitaxial GaN low-dimensional nanostructures on Al2O3(0001) by sheer kinetic control without involving
Characterization of GaN Nanowall Network and Optical Property of InGaN/GaN Quantum Wells by Molecular Beam Epitaxy
A GaN nanowall network and InGaN/GaN quantum wells were grown on AlN/Si(111) substrates by molecular beam epitaxy (MBE). The morphology, polarity, structural, and optical properties of the GaN
...
1
2
3
...