Quantum Transport Simulations of InGaAs HEMTs: Influence of Mass Variations on the Device Performance


This paper presents a simulation work of In0.7Ga0.3As HEMT devices for logic applications using a quantum ballistic 2D simulator based on the non-equilibrium Green’s function (NEGF) approach coupled to a 2D Poisson for the electrostatics. In a previous study, we showed that In0.7Ga0.3As short channel HEMT devices operates close to the ballistic limit and… (More)


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