Quantum-Mechanical Analytical Modeling of Threshold Voltage in Long-Channel Double-Gate MOSFET with Symmetric and Asymmetric

@inproceedings{Autran2004QuantumMechanicalAM,
  title={Quantum-Mechanical Analytical Modeling of Threshold Voltage in Long-Channel Double-Gate MOSFET with Symmetric and Asymmetric},
  author={J. L. Autran and Daniela Munteanu and O. Tintori and Sarah Harrison and E. Decarre and Thomas Skotnicki},
  year={2004}
}
A quantum-mechanical (QM) full analytical model of the threshold voltage (VT) for long-channel double-gate (DG) MOSFETs has been developed. This approach is based on analytical solutions for the decoupled Schrödinger and Poisson equations solved in the silicon region. Using this original model, a detailed quantitative comparison between symmetric (SDG) and asymmetric (ASG) architectures has been performed in terms of VT dependence with film thickness and doping level. 

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