• DOI:10.1103/PhysRevLett.102.146804
• Corpus ID: 31030051

Quantum Goos-Hänchen effect in graphene.

@article{Beenakker2009QuantumGE,
  title={Quantum Goos-H{\"a}nchen effect in graphene.},
  author={C. W. J. Beenakker and Ruslan Akhmedovich Sepkhanov and A. Akhmerov and Jakub Tworzydło},
  journal={Physical review letters},
  year={2009},
  volume={102 14},
  pages={
          146804
        }
}

• C. Beenakker, R. Sepkhanov, +1 author J. Tworzydło
• Published 31 December 2008
• Physics
• Physical review letters

The Goos-Hänchen (GH) effect is an interference effect on total internal reflection at an interface, resulting in a shift sigma of the reflected beam along the interface. We show that the GH effect at a p-n interface in graphene depends on the pseudospin (sublattice) degree of freedom of the massless Dirac fermions, and find a sign change of sigma at angle of incidence alpha=arcsin sqrt[sinalpha{c}] determined by the critical angle alpha{c} for total reflection. In an n-doped channel with p-doped boundaries the GH effect doubles the degeneracy of the lowest propagating mode, introducing a twofold degeneracy on top of the usual spin and valley degeneracies. This can be observed as a stepwise increase by 8e;{2}/h of the conductance with increasing channel width.