Quantum Goos-Hänchen effect in graphene.

@article{Beenakker2009QuantumGE,
  title={Quantum Goos-H{\"a}nchen effect in graphene.},
  author={C. W. J. Beenakker and Ruslan Akhmedovich Sepkhanov and A. Akhmerov and Jakub Tworzydło},
  journal={Physical review letters},
  year={2009},
  volume={102 14},
  pages={
          146804
        }
}
The Goos-Hänchen (GH) effect is an interference effect on total internal reflection at an interface, resulting in a shift sigma of the reflected beam along the interface. We show that the GH effect at a p-n interface in graphene depends on the pseudospin (sublattice) degree of freedom of the massless Dirac fermions, and find a sign change of sigma at angle of incidence alpha=arcsin sqrt[sinalpha{c}] determined by the critical angle alpha{c} for total reflection. In an n-doped channel with p… 

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References

SHOWING 1-10 OF 24 REFERENCES
Colloquium: Andreev reflection and Klein tunneling in graphene
A colloquium-style introduction to two electronic processes in a carbon monolayer (graphene) is presented, each having an analog in relativistic quantum mechanics. Both processes couple electronlike
Calculation of the conductance of a graphene sheet using the Chalker-Coddington network model
The Chalker-Coddington network model (introduced originally as a model for percolation in the quantum Hall effect) is known to map onto the two-dimensional Dirac equation. Here we show how the
The Focusing of Electron Flow and a Veselago Lens in Graphene p-n Junctions
TLDR
The focusing of electric current by a single p-n junction in graphene is theoretically predicted and may be useful for the engineering of electronic lenses and focused beam splitters using gate-controlled n-p-n junctions in graphene-based transistors.
Electronic properties of graphene
Graphene is the first example of truly two‐dimensional crystals – it's just one layer of carbon atoms. It turns out that graphene is a gapless semiconductor with unique electronic properties
Tunable lateral displacement and spin beam splitter for ballistic electrons in two-dimensional magnetic-electric nanostructures
We investigate the lateral displacements for ballistic electron beams in a two-dimensional electron gas modulated by metallic ferromagnetic (FM) stripes with parallel and antiparallel (AP)
‘Trapped rainbow’ storage of light in metamaterials
TLDR
It is demonstrated theoretically that an axially varying heterostructure with a metamaterial core of negative refractive index can be used to efficiently and coherently bring light to a complete standstill, and allows for high in-coupling efficiencies and broadband, room-temperature operation.
Electric Field Effect in Atomically Thin Carbon Films
TLDR
Monocrystalline graphitic films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands and they exhibit a strong ambipolar electric field effect.
Theory of light propagation in strongly modulated photonic crystals: Refractionlike behavior in the vicinity of the photonic band gap
Although light propagation in weakly modulated photonic crystals is basically similar to propagation in a diffraction grating in which conventional refractive index loses its meaning, we demonstrate
Evanescent waves : from Newtonian optics to atomic optics
I. The Evanescent Field.- 1. Total Internal Reflection.- 1.1 The Electromagnetic Field at Total Internal Reflection.- 1.1.1 Snell's Law.- 1.1.2 Analysis of Total Internal Reflection on the Basis of
...
...