Quantum-Confined Stark Effect in Ge/SiGe Quantum Wells on Si

@article{Rong2006QuantumConfinedSE,
  title={Quantum-Confined Stark Effect in Ge/SiGe Quantum Wells on Si},
  author={Yiwen Rong and Yangsi Ge and Yijie Huo and Marco Fiorentino and Michael R. T. Tan and Ted I. Kamins and T. Ochalski and Guillaume Huyet and J. S. Harris},
  journal={IEEE Journal of Selected Topics in Quantum Electronics},
  year={2006},
  volume={16},
  pages={85-92}
}
In this paper, we present observations of quantum confinement and quantum-confined Stark effect electroabsorption in Ge quantum wells with SiGe barriers grown on Si substrates. Though Ge is an indirect gap semiconductor, the resulting effects are at least as clear and strong as seen in typical III-V quantum well structures at similar wavelengths. We also designed and fabricated a coplanar high-speed modulator, and demonstrated modulation at 10 GHz and a 3.125-GHz eye diagram for 30-¿m-sized… CONTINUE READING
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