Quantization effects in gate-all-around nanowire MOSFETs: A numerical study


This paper presents a numerical study of quantization effects in gate-all-around nanowire transistors with circular cross section. The model is based on the self consistent solution of Schrödinger and Poisson equations. The eigenenergies and wavefunctions were first verified analytically whenever possible. Electron distribution profiles, body and… (More)


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