Quantitative temperature measurement of multi-layered semiconductor devices using spectroscopic thermoreflectance microscopy.

Abstract

Thermoreflectance microscopy is essential in understanding the unpredictable local heating generation that occurs during microelectronic device operation. However, temperature measurements of multi-layered semiconductor devices represent a challenge because the thermoreflectance coefficient is quite small and is dramatically changed by the optical interference inside transparent layers of the device. Therefore, we propose a spectroscopic thermoreflectance microscopy system using a systematic approach for improving the quantitative temperature measurement of multi-layered semiconductor devices. We demonstrate the quantitative measurement of the temperature profile for physical defects on thin-film polycrystalline silicon resistors via thermoreflectance coefficient calibration and effective coefficient κ estimation.

DOI: 10.1364/OE.24.013906

Cite this paper

@article{Kim2016QuantitativeTM, title={Quantitative temperature measurement of multi-layered semiconductor devices using spectroscopic thermoreflectance microscopy.}, author={Dong Uk Kim and Kwan Seob Park and Chan Bae Jeong and Geon Hee Kim and Ki Soo Chang}, journal={Optics express}, year={2016}, volume={24 13}, pages={13906-16} }