Quantitative strain analysis of misfit dislocations in a Ge/Si heterostructure interface by geometric phase analysis

@inproceedings{Liu2012QuantitativeSA,
  title={Quantitative strain analysis of misfit dislocations in a Ge/Si heterostructure interface by geometric phase analysis},
  author={Quanlong Liu and Chunwang Zhao and Yu Ming Xing and She Jiao Su and Buwen Cheng},
  year={2012}
}
Abstract Misfit dislocations in a Ge/Si heterostructure were investigated experimentally in the present work. The misfit dislocations were demonstrated to be pure edge dislocations, with distances of about 10 nm between misfit dislocations. The strain fields around the misfit dislocation core were mapped using a combination of geometric phase analysis and high-resolution transmission electron microscopy. The strain measurement results were compared with the Peierls–Nabarro and Foreman models of… CONTINUE READING

Citations

Publications citing this paper.