Quantitative investigation of SiGeC layers using atom probe tomography.

@article{Estivill2015QuantitativeIO,
  title={Quantitative investigation of SiGeC layers using atom probe tomography.},
  author={Robert Estivill and Adeline Grenier and S{\'e}bastien Duguay and François Vurpillot and T Terlier and J Barnes and Jean-Michel Hartmann and Didier Blavette},
  journal={Ultramicroscopy},
  year={2015},
  volume={150},
  pages={
          23-29
        }
}
The quantification of carbon and germanium in a Si/SiGeC multilayer structure using atom probe tomography has been investigated as a function of analysis conditions. The best conditions for quantitative results are obtained using an intermediate electric field and laser power. Carbon evaporation shows strong spatial and temporal correlation. By using multi-ion event analysis, an evaporation mechanism is put forward to explain the modification of mass spectra as a function of electric field and… CONTINUE READING