Quantitative Study on Current-Induced Effect in an Antiferromagnet Insulator/Pt Bilayer Film.

@article{Zhang2019QuantitativeSO,
  title={Quantitative Study on Current-Induced Effect in an Antiferromagnet Insulator/Pt Bilayer Film.},
  author={Pengxiang Zhang and Joseph Finley and Taqiyyah S. Safi and Luqiao Liu},
  journal={Physical review letters},
  year={2019},
  volume={123 24},
  pages={
          247206
        }
}
A quantitative investigation of the current-induced torque in antiferromagnets represents a great challenge due to the lack of an independent method for controlling Néel vectors. By utilizing an antiferromagnetic insulator with the Dzyaloshinskii-Moriya interaction α-Fe_{2}O_{3}, we show that the Néel vector can be controlled with a moderate external field, which is further utilized to calibrate the current-induced magnetic dynamics. We find that the current-induced magnetoresistance change in… 

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References

SHOWING 1-10 OF 50 REFERENCES

Antidamping-Torque-Induced Switching in Biaxial Antiferromagnetic Insulators.

The current-induced switching of the Néel order in NiO(001)/Pt heterostructures is investigated, which is manifested electrically via the spin Hall magnetoresistance, providing broad opportunities for all-electrical writing and readout in antiferromagnetic spintronics.

Imaging of current induced Néel vector switching in antiferromagnetic Mn2Au

The effects of current induced N\'eel spin-orbit torques on the antiferromagnetic domain structure of epitaxial Mn$_2$Au thin films were investigated by X-ray magnetic linear dichroism -

Electrical Switching of Antiferromagnetic Mn2Au and the Role of Thermal Activation

Electrical manipulation of antiferromagnets with specific symmetries offers the prospect of creating novel, antiferromagnetic spintronic devices. Such devices aim to make use of the insensitivity to

Antiferromagnetic textures and dynamics on the surface of a heavy metal

We investigate the formation and dynamics of spin textures in antiferromagnetic insulators adjacent to a heavy-metal substrate with strong spin-orbit interactions. Exchange coupling to conduction

Imaging Current-Induced Switching of Antiferromagnetic Domains in CuMnAs.

Using x-ray magnetic linear dichroism microscopy, it is shown that staggered effective fields generated by electrical current can induce modification of the antiferromagnetic domain structure in microdevices fabricated from a tetragonal CuMnAs thin film.

Mechanism of Néel Order Switching in Antiferromagnetic Thin Films Revealed by Magnetotransport and Direct Imaging.

The authors' data reveal two different magnetic switching mechanisms leading together to an efficient switching, namely, the spin-current induced effective magnetic anisotropy variation and the action of the spin torque on the DWs.

Electrically induced and detected Néel vector reversal in a collinear antiferromagnet

Electrical Néel vector reversal and its detection in a fully compensated collinear antiferromagnet (AF) by exploiting the broken time reversal and spatial inversion symmetries of the AF is reported.

Spin torque control of antiferromagnetic moments in NiO

It is shown that the magnetic moments in NiO, a typical natural antiferromagnet, can indeed be controlled by the spin torque with a relatively small electric current density and their orientation is detected by the transverse resistance resulting from the spin Hall magnetoresistance.

Writing and reading antiferromagnetic Mn2Au by Néel spin-orbit torques and large anisotropic magnetoresistance

Pulse current induced Néel vector switching in Mn2Au(001) epitaxial thin films is achieved, which is associated with a large magnetoresistive effect allowing simple read-out.

Spin Hall magnetoresistance in antiferromagnet/heavy-metal heterostructures

We investigate the spin Hall magnetoresistance in thin-film bilayer heterostructures of the heavy metal Pt and the antiferromagnetic insulator NiO. While rotating an external magnetic field in the