Quantitative HRTEM analysis of FIB prepared specimens

  title={Quantitative HRTEM analysis of FIB prepared specimens},
  author={Mor Baram and Wayne D. Kaplan},
  journal={Journal of Microscopy},
The preparation of good transmission electron microscopy specimens with minimum milling damage can be very complicated, especially from a specific area in a sample. Therefore, a novel approach for transmission electron microscopy specimen preparation using a focused ion beam system is proposed, based on the use of low energy (5 kV)Ga ions and a low incident ion angle (∼1°) from a thickness of ∼500 nm until the sample is electron transparent. Transmission electron microscopy specimens prepared… 
Sample preparation for atomic-resolution STEM at low voltages by FIB.
Limiting Damage to 2D Materials during Focused Ion Beam Processing
2D materials are by definition just a few atomic layers thick. They are therefore ideal samples for transmission electron microscopy, in the plan‐view geometry. However, 2D materials are typically
Use of permanent marker to deposit a protection layer against FIB damage in TEM specimen preparation
It is suggested that an amorphous carbon structure, which creates permanent writing on an object with a permanent marker, can be an excellent protection layer to maintain a pristine sample structure against focused ion beam damage during transmission electron microscopy specimen preparation.
Combining FIB milling and conventional Argon ion milling techniques to prepare high‐quality site‐specific TEM samples for quantitative EELS analysis of oxygen in molten iron
This paper reports a procedure to combine the focused ion beam micro‐sampling method with conventional Ar‐milling to prepare high‐quality site‐specific transmission electron microscopy cross‐section
Revealing ‘invisible’ defects in implanted material with 3D Bragg ptychography
Small ion-irradiation-induced defects can dramatically alter material properties and speed up degradation. Unfortunately, most of the defects irradiation creates are below the visibility limit of
Revealing nano-scale lattice distortions in implanted material with 3D Bragg ptychography
An x-ray crystalline microscopy approach, able to image with high sensitivity, nano-scale 3D resolution and extended field of view, the lattice strains and tilts in crystalline materials, opens up exciting perspectives for the modelling of irradiation damage and the detailed analysis of crystalline properties in complex materials.
High resolution TEM analysis of focused ion beam amorphized regions in single crystal silicon—A complementary materials analysis of the teardrop method
The predominant challenge of nanomachining by focused ion beam (FIB) is the generational down-scaling of minimum dimensions of cutting-edge technologies such as very large scale integration (VLSI)
Energetic Cs+ ion interaction with common microelectronic materials—An investigation of a future FIB candidate source
In this paper, the authors studied the interaction of 14.5 keV accelerated Cs+ ion interaction with commonly used materials in the microelectronic industry. The motivation of this work was to examine


TEM Sample Preparation and FIB-Induced Damage
One of the most important applications of a focused ion beam (FIB) workstation is preparing samples for transmission electron microscope (TEM) investigation. Samples must be uniformly thin to enable
High-Quality Sample Preparation by Low kV FIB Thinning for Analytical TEM Measurements
Focused ion beam specimen preparation has been used for NiTi samples and SrTiO3/SrRuO3 multilayers with prevention of surface amorphization and Ga implantation by a 2-kV cleaning procedure, showing high quality with a controlled thickness over large scales.
Reducing focused ion beam damage to transmission electron microscopy samples.
  • N. Kato
  • Physics
    Journal of electron microscopy
  • 2004
The reported damage depths of FIB-prepared samples are reviewed, which are determined by experiments and calculations and conclude that the use of low energy FIB and cleaning by argon BIB are particularly efficient techniques.
A review of focused ion beam milling techniques for TEM specimen preparation
The use of focused ion beam (FIB) milling for the preparation of transmission electron microscopy (TEM) specimens is described. The operation of the FIB instrument is discussed and the conventional
A review of focused ion beam milling techniques for TEM specimen preparation
A study of the damage on FIB-prepared TEM samples of AlxGa1-xAs.
FIB milling at 5 kV effectively minimizes the thickness of the amorphous layer and also provides flat sidewalls on multilayer samples of Al(x)Ga(1-x)As that are prepared for TEM and scanning electron microscopy (SEM).
Broad ion beam milling of focused ion beam prepared transmission electron microscopy cross sections for high resolution electron microscopy
A technique is presented which enables both sides of a transmission electron microscopy cross section specimen prepared using a focused ion beam system to be milled using a broad ion beam source. The
Preparation of transmission electron microscopy cross-section specimens using focused ion beam milling
The preparation of transmission electron microscopy cross-section specimens using focused ion beam milling using the “liftout” and “trench” techniques are outlined, and their relative advantages and disadvantages are discussed.
Improvements in performance of focused ion beam cross-sectioning: aspects of ion-sample interaction.
The present paper clarifies the parameters that impose limitation on the following performances of the FIB cross- sectioning: milling rate, cross-sectioning at a right angle with respect to the sample surface, curtain structures formed on the cross sections, ion implantation and ion damage.