Quantitative Capacitance Measurements of MOS Structures using a Scanning Probe Microscope

@article{Ott2006QuantitativeCM,
  title={Quantitative Capacitance Measurements of MOS Structures using a Scanning Probe Microscope},
  author={Michael Ott and Jason Abt and Udit Sharma and Edward Keyes and Trevor J. Hall and Henry Schriemer},
  journal={2006 Canadian Conference on Electrical and Computer Engineering},
  year={2006},
  pages={842-845}
}
This paper describes the simulation and implementation of a method by which an atomic force microscope with scanning capacitance microscopy (SCM) capability can be employed in a nontraditional fashion to quantitatively measure the capacitance of metal-oxide-semiconductor (MOS) structures. The capability to deduce sample capacitances is based on resonant… CONTINUE READING