Quantitative Analysis of Current–Voltage Characteristics of Semiconducting Nanowires: Decoupling of Contact Effects

@inproceedings{Zhang2007QuantitativeAO,
  title={Quantitative Analysis of Current–Voltage Characteristics of Semiconducting Nanowires: Decoupling of Contact Effects},
  author={Zhiyong Zhang and Kun Yao and Yang Liu and Chuanhong Jin and Xuelei Liang and Qing Chen and Lian-Mao Peng},
  year={2007}
}
A metal-semiconductor-metal (M-S-M) model for quantitative analysis of current–voltage (I–V) characteristics of semiconducting nanowires is described and applied to fit experimental I–V curves of Bi2S3 nanowire transistors. The I–V characteristics of semiconducting nanowires are found to depend sensitively on the contacts, in particular on the Schottky barrier height and contact area, and the M-S-M model is shown to be able to reproduce all experimentally observed I–V characteristics using only… CONTINUE READING

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