Quantifying defects in graphene via Raman spectroscopy at different excitation energies.

@article{Canado2011QuantifyingDI,
  title={Quantifying defects in graphene via Raman spectroscopy at different excitation energies.},
  author={Luiz Gustavo Cançado and Ado Jorio and Erlon H. Martins Ferreira and Fernando Stavale and C. A. Achete and Rodrigo B. Capaz and Marcus V O Moutinho and Antonio Lombardo and Tero S. Kulmala and Andrea C. Ferrari},
  journal={Nano letters},
  year={2011},
  volume={11 8},
  pages={3190-6}
}
We present a Raman study of Ar(+)-bombarded graphene samples with increasing ion doses. This allows us to have a controlled, increasing, amount of defects. We find that the ratio between the D and G peak intensities, for a given defect density, strongly depends on the laser excitation energy. We quantify this effect and present a simple equation for the determination of the point defect density in graphene via Raman spectroscopy for any visible excitation energy. We note that, for all… CONTINUE READING
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