QDAME simulation of 7.5 nm double-gate Si nFETs with differing access geometries

  title={QDAME simulation of 7.5 nm double-gate Si nFETs with differing access geometries},
  author={S. E. Laux and Arvind Kumar and M. V. Fischetti},
  journal={Digest. International Electron Devices Meeting,},
We describe QDAME, a new device simulation program which solves self-consistently the Poisson and Schrodinger equations in two space dimensions under the approximation of ballistic transport. The effects of differing access geometries on 7.5 nm double-gate Si FETs are discussed. 

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