Q-factor characterization of RF GaN-based metal-semiconductor-metal planar interdigitated varactor

@article{Chu2005QfactorCO,
  title={Q-factor characterization of RF GaN-based metal-semiconductor-metal planar interdigitated varactor},
  author={Chun San Chu and Yugang Zhou and K. J. Chen and K. M. Lau},
  journal={IEEE Electron Device Letters},
  year={2005},
  volume={26},
  pages={432-434}
}
We report the characterization of quality (Q)-factor of RF metal-semiconductor-metal (MSM) planar interdigitated varactors fabricated by standard AlGaN/GaN HEMT process. The MSM varactors have wide tuning range and exhibit high quality-factor at both the maximum and minimum capacitance values. The fundamental limitation of the Q-factor in the medium capacitance range is also revealed. The elimination of ohmic contact resistance in the MSM varactor configuration pushed up the peak Q-factor to 92… CONTINUE READING

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