Punch-through reading mechanism and body raised up structure for a novel Punch-Through DRAM

Abstract

It is the first time, we propose a new reading mechanism for an ARAM-like 1T-DRAM by exploiting Punch-Through (PT) phenomenon. We simulated and investigated the results of a modified ARAM structure with respect to different channel length, channel thickness. We found that the structure has an acceptable programming window (33 µA/um) at shorter gate lengths. The retention time can be improved by using a raised P-body which is beneficial in achieving a retention time of 341 ms‥

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Cite this paper

@article{Lin2016PunchthroughRM, title={Punch-through reading mechanism and body raised up structure for a novel Punch-Through DRAM}, author={Chih-Chia Lin and Jyi-Tsong Lin and Wei-Han Lee and Chih-Kai Huang and Ting-Chung Chang and A. Kranti}, journal={2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)}, year={2016}, pages={866-868} }