Pulsed vs. CW power performance of InGaP/GaAs HBTs

  title={Pulsed vs. CW power performance of InGaP/GaAs HBTs},
  author={Subrata Halder and J. C. M. Hwang and B. Geller},
  journal={2005 Asia-Pacific Microwave Conference Proceedings},
  pages={3 pp.-}
Load-pull power and waveform measurements were performed on C-band InGaP/GaAs heterojunction bipolar transistors of various sizes. In general, pulsed output power was found to be 2-4dB higher than CW output power. Based on the measured dynamic load lines, the higher output power can be attributed to higher peak current and higher breakdown voltage under… CONTINUE READING