Pulsed transfer etching of PS-PDMS block copolymers self-assembled in 193 nm lithography stacks.

  title={Pulsed transfer etching of PS-PDMS block copolymers self-assembled in 193 nm lithography stacks.},
  author={C. Girardot and S. Böhme and S. Archambault and M. Sala{\"u}n and E. Latu-Romain and G. Cunge and O. Joubert and M. Zelsmann},
  journal={ACS applied materials \& interfaces},
  volume={6 18},
This work presents the graphoepitaxy of high-χ block copolymers (BCP) in standard industry-like lithography stacks and their transfer into the silicon substrate The process includes conventional 193 nm photolithography, directed self-assembly of polystyrene-block-polydimethylsiloxane (PS-b-PDMS) and pulsed plasma etching to transfer the obtained features into the substrate. PS-b-PDMS has a high Flory-Huggins interaction parameter (high-χ) and is capable of achieving sub-10 nm feature sizes. The… Expand
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