Pulsed-laser testing for single event effects in a stand-alone resistive random access memory

Abstract

Single Event Effects (SEE) in a stand-alone 1T1R Resistive Random Access Memory (RRAM) are experimentally demonstrated by using pulsed laser irradiation. No bit errors are observed in the RRAM array at an equivalent LET of more than 100 MeV.cm<sup>2</sup>/mg, indicating that the RRAM memory cells are robust against SEE. The most sensitive regions are the… (More)

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Cite this paper

@article{Kai2017PulsedlaserTF, title={Pulsed-laser testing for single event effects in a stand-alone resistive random access memory}, author={Xi Kai and Zhang Feng and Li Jin and Ji Lanlong and Fang Cong and Liu Jing and Liu Ming and Bi Jinshun}, journal={2017 IEEE 24th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)}, year={2017}, pages={1-4} }