Pulsed laser deposition of SBN:75 thin films with electro-optic coefficient of 844 pm/V

@inproceedings{Tayebati1996PulsedLD,
  title={Pulsed laser deposition of SBN:75 thin films with electro-optic coefficient of 844 pm/V},
  author={Parviz Tayebati and Dhrupad Anil Trivedi and Martin D. Tabat},
  year={1996}
}
In this letter we report on the pulsed laser epitaxial deposition of thin films of Sr0.75Ba0.25Nb2O6 on MgO substrates with measured diagonal Pockel’s coefficient r33=844 pm/V in these films. This is the largest linear electro‐optic coefficient reported to date in a thin film material. In order to measure this coefficient, we developed a modulated diffraction technique. This method is widely applicable to cases where the substrate is insulating and the optical axis is normal to the substrate. 

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