Pulse low-energy electron beam pumped IR-lasers based on InGaAs/AlGaAs/GaAs nanoheterostructures


Temperature dependence of threshold current density in the range 50-300 K for lasers based on InGaAs/AlGaAs/GaAs quantum-dimensional heterostructures under electron beam pumping with electron energy in the range 2-11 keV is investigated. Minimal threshold current density value as low as 0.05 A/cm2 at the electron energy of 9-11 keV and temperature 200 K is… (More)

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