Pseudomorphic InP HEMTs with dry-etched source vias having 190 mW output power and 40% PAE at V-band

@article{Grundbacher1999PseudomorphicIH,
  title={Pseudomorphic InP HEMTs with dry-etched source vias having 190 mW output power and 40% PAE at V-band},
  author={R. Grundbacher and R. Lai and M. Nishimoto and T D Chin and Y. C. Chen and M. E. Barsky and T. R. Block and D. A. Streit},
  journal={IEEE Electron Device Letters},
  year={1999},
  volume={20},
  pages={517-519}
}
We report state-of-the-art V-band power performance of 0.15-/spl mu/m gate length InGaAs/InAlAs/InP HEMT's which have 15 /spl mu/m/spl times/23 /spl mu/m dry-etched through-substrate source vias (substrate thickness 50 /spl mu/m). The 500-/spl mu/m wide InP HEMT's were measured in fixture at 60 GHz and demonstrated an output power of 190 mW with 40% power… CONTINUE READING